800-1700nm 2.5G InGaAs Avalanche Diode Photodetector APD 2G FC SMF Pigtail PD Module
This serie are planar structure InGaAs PIN Photodiode and FC/APC pigtailconnector designed for both optical networks monitoring and digitalor analog communication receiver application; This series are hermetically sealed coaxial Devices with very low leakage,Using excellent alignment and curing technology ensures the coaxialdevices have high-performance, high reliability and long life.
[Features]
Planar structure InGaAs diodes on n+ InP substrates.
Low capacitance, dark current ,Rate up to max 4G/bps.
High responsivity and low optical reflection.
High reliability, long operation life.
FC/APC connector &SMF pigtail is standard, customer specified is available.
[Applications]
Short reach digital and analog optical communication networks.
Optical power monitoring and fiber sensing.
Absolute Maximum Ratings:
Stresses in excess of the absolute maximum ratings can cause over-stress damage to thedevice. These are absolute stress ratings only. Functional operation of the device is notimplied at these or any other conditions in excess of those given in the operations sectionsof the data sheet. Exposure to absolute maximum ratings for extended periods canadversely affect device reliability.
Parameter |
Symbol |
Min Value |
Max Value |
Unit |
Conditions |
Operating Temperature |
Top |
-40 |
+85 |
℃ |
|
Storage Temperature |
Tstg |
-40 |
+85 |
℃ |
|
Forward Voltage |
Vf |
|
20 |
V |
|
Input Optical Power |
Pi |
|
+10 |
dBm |
Peak, λ=1310nm |
Soldering Temperature |
Ts |
|
260 |
℃ |
10s |
ESD handle |
V |
500 |
|
|
HBM |
Electrical and Optical Characteristics:(T=25℃)
Parameter |
Symbol |
Min Value |
Typical Value |
Max Value |
Unit |
Conditions |
Active diameter |
D |
|
45 |
|
μm |
|
Bandwidth |
BW |
|
2 |
|
GHz |
R=50Ω, Pi=10dBm, Vr=5V |
Wavelength |
λ |
910 |
1310/1550 |
1650 |
nm |
|
Responsibility |
Re |
0.80 |
|
|
A/W |
Vr=5, λ=1310nm |
Responsibility |
Re |
0.90 |
|
|
A/W |
Vr=5, λ=1550nm |
Dark Current |
Id |
|
|
3 |
nA |
Vr=5 |
Operation Voltage |
V |
3.0 |
5.0 |
10 |
V |
|
Capacitance |
C |
|
|
0.6 |
pF |
Vr=5, f=1MHZ |
Return Loss |
RL |
|
50 |
|
dB |
1310nm |
Fiber &Connector |
Fiber: 9/125um SMF, Φ900um, L=1m; Connector: FC/APC |
Handling Precautions:
The device should be handled in the same manner as ordinary semiconductor devices toprevent electro-static damages (ESD).For safekeeping and carrying. this device should bepackaged with ESD proof material. When assembling the device on the equipment and thehuman body should be grounded.