808A-72-300-34-1.5-BAR 808nm 300W High Power IR Diode Laser Bar 34 Emitters Bare Chip

$164.00

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808A-72-300-34-1.5-BAR 808nm 300W High Power IR Diode Laser Bar 34 Emitters Bare Chip

[Features]
High reliability
Advanced in power,brightness,efficiency and divergence.

[Applications]
printing technology
Esthetics
Dermatology
Surgery

Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In Chin

[Specifications]

Parameters

Symbol

Min.

Typical 

Max.

Unit

Center wavelength

λ

798

808

818

nm

Output power
Po

 

300

 

W

Operation mode

 

 

QCW

 

 

Geometrical

Number of emitters

n

 

34

 

 

Single emitter contact width
w

 

210

 

μm
Emitter pitch

W

 

290

 

μm
Filling factor

F

 

72

 

%

Resonator length

L

 

1500

 

μm
Bar width

W

 

10

 

mm
Bar height

H

 

150

 

μm

Electro Optical Data

Threshold current

Ith

 

27

37

A

Operating current

Iop

 

272

 

A

Operating voltage

Vop

 

1.85

2

V

Slope efficiency

ηd=Po/(Iop -Ith)

1.1

1.27

 

W/A

Total conversion efficiency

η=Po/(Iop x Vop)

49.6

59

 

%

Slow axis divergence ②

θ∥

 

9

12

degrees

Fast axis divergence ③

θ⊥

 

36

40

degrees

Spectral Bandwidth

BW

 

2

5

nm

Notes:
① Deduced from single emitters data..
② Cover 95% power.
③ FWHM (Full width half maximum).

 

laser diode bar

laser diode bar







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