808nm 50W High Power Diode Laser Bar 19 Emitters Bare Chip 808B-30-50-19-1-BAR
[Features]
High reliability
Advanced in power,brightness,efficiency and divergence.
[Applications]
printing technology
Esthetics
Dermatology
Surgery
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In Chin
[Specifications]
|
Parameters
|
Symbol
|
Min.
|
Typical ①
|
Max.
|
Unit
|
|
Center wavelength
|
λ
|
798
|
808
|
818
|
nm
|
|
Output power
|
Po
|
|
50
|
|
W
|
|
Operation mode
|
|
|
CW
|
|
|
|
Geometrical
|
|
Number of emitters
|
n
|
|
19
|
|
|
|
Single emitter contact width
|
w
|
|
150
|
|
μm
|
|
Emitter pitch
|
W
|
|
500
|
|
μm
|
|
Filling factor
|
F
|
|
30
|
|
%
|
|
Resonator length
|
L
|
|
1000
|
|
μm
|
|
Bar width
|
W
|
|
9.8
|
|
mm
|
|
Bar height
|
H
|
|
150
|
|
μm
|
|
Electro Optical Data
|
|
Threshold current
|
Ith
|
|
8.7
|
|
A
|
|
Operating current
|
Iop
|
|
45
|
|
A
|
|
Operating voltage
|
Vop
|
|
1.76
|
|
V
|
|
Slope efficiency
|
ηd=Po/(Iop -Ith)
|
|
1.38
|
|
W/A
|
|
Total conversion efficiency
|
η=Po/(Iop x Vop)
|
|
63
|
|
%
|
|
Slow axis divergence ②
|
θ∥
|
|
10
|
|
degrees
|
|
Fast axis divergence ③
|
θ⊥
|
|
35
|
|
degrees
|
|
Spectral Bandwidth
|
BW
|
|
3
|
|
nm
|
|
Polarization
|
|
|
TE
|
|
|
|
Notes:
① Deduced from single emitter data acquired by testing system. Bar is cut into single emitter, mounted on a heat sink with Rth =2~3 K/W， coolant temperature 25℃, operating at nominal power.
② Cover 95% power.
③ FWHM (Full width half maximum).
|
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