905nm 225W Pulsed Laser Diode Single Emitter 0.065nm/℃ Low Wavelenth Temperature Coefficient 905E-300-225-0.75-SE
[Features]
5 stack PLD
Laser wavelength: 905 nm
Peak output power:≥225 W
Laser aperture (FWHM) size:240 μm x 19 μm
Laser aperture (enclosed 95%E) size: 300 μm
[Applications]
LiDAR
Laser ranging
Safety monitoring
Scientific rersearch test
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China
[Specifications]
|
Parameters
|
Symbol
|
Min.
|
Typical
|
Max.
|
Unit
|
|
Operation
|
|
Peak emission wavelength
|
λop
|
895
|
905
|
915
|
nm
|
|
Spectral bandwidth ②
|
BW
|
5
|
7
|
8
|
nm
|
|
Wavelength temperature coefficient
|
Δλ/ΔT
|
|
0.065
|
0.09
|
nm/℃
|
|
Absolute Maximum Ratings(Trt=25℃)
|
|
Operating current
|
If
|
|
45
|
|
A
|
|
Reverse voltage
|
Vr
|
|
20
|
|
V
|
|
Pulsed duration
|
Pw
|
|
100
|
|
ns
|
|
Duty ratio
|
DR
|
|
0.1
|
|
%
|
|
Operating temperature
|
Top
|
-40
|
|
85
|
℃
|
|
Storage temperature
|
Tstg
|
-40
|
|
105
|
℃
|
|
Geometrical
|
|
Laser Aperture (95%E) Size ①
|
w
|
|
300
|
|
μm
|
|
Laser Aperture（FWHM） Size②
|
w x h
|
|
240 x 19
|
|
μm²
|
|
Cavity length
|
L
|
|
750
|
|
μm
|
|
Chip width
|
W
|
|
400
|
|
μm
|
|
Chip height
|
H
|
|
150
|
|
μm
|
|
Electro Optical Data
|
|
Operating Power
|
Pop
|
|
225
|
|
W
|
|
Operating Current
|
Iop
|
37
|
38
|
40
|
A
|
|
Turn-on Voltage
|
Von
|
|
6.8
|
|
V
|
|
Series Resistance
|
Rs
|
|
0.28
|
|
Ω
|
|
Threhold Current
|
Ith
|
|
0.8
|
|
A
|
|
Operating Voltage
|
Vop
|
16.9
|
17.6
|
18.3
|
V
|
|
Beam Divergenc(95%E)parallel to pn-junction ①
|
θ∥
|
12
|
14
|
20
|
degrees
|
|
Beam Divergenc(FWHM)parallel to pn-junction ②
|
θ∥
|
9
|
10
|
11
|
degrees
|
|
Beam Divergenc(95%E) perpendicular to pn-junction ①
|
θ⊥
|
45
|
48
|
53
|
degrees
|
|
Beam Divergenc(FWHM) perpendicular to pn-junction ②
|
θ⊥
|
20
|
22
|
25
|
degrees
|
|
Note:
① Full width at 95% power content
② Full Width at half maxima
|
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