880B-190-15-4-SE 880nm 15W Laser Chip 190μm Emission Width 4mm Cavity Length Single Emitter
[Features]
High laser power
High efficiency.
Excellent beam characteristics.
Long lifetime, high reliability.
[Applications]
Laser Display
Laser Illumination
Medical & Cosmetics
Scientific Research
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China
[Specifications]
|
Parameters
|
Symbol
|
Min.
|
Typical
|
Max.
|
Unit
|
|
Operation①
|
|
Center wavelength@Iop
|
λ
|
875
|
878
|
881
|
nm
|
|
Center wavelength@I=2A
|
λcold
|
870
|
873
|
876
|
nm
|
|
Output power
|
Po
|
14
|
15
|
|
W
|
|
Operation mode
|
|
|
CW
|
|
|
|
Geometrical
|
|
Emitter width
|
w
|
|
190
|
|
μm
|
|
Cavity length
|
L
|
|
4000
|
|
μm
|
|
Chip width
|
W
|
|
500
|
|
μm
|
|
Chip height
|
H
|
|
150
|
|
μm
|
|
Electro Optical Data①
|
|
Threshold current
|
Ith
|
|
1.5
|
1.9
|
A
|
|
Operating current
|
Iop
|
|
15
|
|
A
|
|
Operating voltage
|
Vop
|
|
1.7
|
1.9
|
V
|
|
Slope efficiency
|
ηd=Po/(Iop - Ith）
|
|
1.1
|
|
W/A
|
|
Total conversion efficiency
|
η=Po/(Iop x Vop)
|
54
|
58
|
|
%
|
|
Slow axis divergence ②
|
θ∥
|
|
8.5
|
10
|
degrees
|
|
Fast axis divergence ②
|
θ⊥
|
|
35
|
40
|
degrees
|
|
Spectral Bandwidth③
|
△λ
|
|
3
|
4
|
nm
|
|
Polarization
|
|
|
TE
|
|
|
|
Wavelenth Temperature Coefficient
|
Δλ/ΔT
|
|
0.25
|
|
nm/℃
|
|
Degree of polarization
|
DOP=PTE/(PTE+PTM)
|
95
|
98
|
|
%
|
|
Reflectivity of front facet
|
Rff
|
|
1.5
|
|
%
|
|
Burn-in test
|
|
Burn-in current
|
IBI
|
|
15
|
|
A
|
|
Burn-in temperature
|
TBI
|
|
40
|
|
℃
|
|
Burn-in time
|
Hr
|
|
48
|
|
Hour
|
|
Power variation
|
|
|
|
5
|
%
|
|
Note:
① Mounted on a heat sink with Rth =2~3 K/W, coolant temperature 25℃, operating at normal power.
② Full width at 95 % power content.
③ FWHM(Full width half maximum).
|
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