808nm 10W 190μm Emission Width 4mm Cavity Length Single Emitter Laser Chip 808B-190-10-4-SE
[Features]
High laser power
High efficiency.
Excellent beam characteristics.
Long lifetime, high reliability.
[Applications]
Laser Display
Laser Illumination
Medical & Cosmetics
Scientific Research
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China
[Specifications]
|
Parameters
|
Symbol
|
Min.
|
Typical
|
Max.
|
Unit
|
|
Operation
|
|
Center wavelength
|
λ
|
803
|
808
|
811
|
nm
|
|
Output power
|
Po
|
10
|
|
|
W
|
|
Operation mode
|
|
|
CW
|
|
|
|
Geometrical
|
|
Emitter width
|
w
|
|
190
|
|
μm
|
|
Cavity length
|
L
|
|
4000
|
|
μm
|
|
Chip width
|
W
|
|
500
|
|
μm
|
|
Chip height
|
H
|
140
|
150
|
150
|
μm
|
|
Electro Optical Data
|
|
Threshold current
|
Ith
|
|
1.25
|
1.45
|
A
|
|
Operating current
|
Iop
|
|
9
|
9.5
|
A
|
|
Operating voltage
|
Vop
|
|
1.75
|
1.85
|
V
|
|
Slope efficiency
|
ηd=Po/(Iop - Ith）
|
1.2
|
1.33
|
|
W/A
|
|
Total conversion efficiency
|
η=Po/(Iop x Vop)
|
60
|
66
|
|
%
|
|
Beam Divergence Angle Width (Horizontal)①
|
θ∥
|
|
8
|
10
|
degrees
|
|
Beam Divergence Angle Width (Vertical) ②
|
θ⊥
|
|
36
|
40
|
degrees
|
|
Spectral Bandwidth①
|
△λ
|
|
2
|
3
|
nm
|
|
Polarization
|
|
|
TM
|
|
|
|
Wavelenth Temperature Coefficient
|
Δλ/ΔT
|
|
0.26
|
|
nm/℃
|
|
Note:
①. Full width at 95% power content
②. FWHM (Full width half maximum).
|
Follow us on Twitter
Facebook page
CivilLaser YouTube