808nm 5W 190μm Emission Width 1.5mm Cavity Length Single Emitter Laser Chip 808B-190-5-1.5-SE

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808nm 5W 190μm Emission Width 1.5mm Cavity Length Single Emitter Laser Chip 808B-190-5-1.5-SE

[Features]
High laser power
High efficiency.
Excellent beam characteristics.
Long lifetime, high reliability.

[Applications]
Laser Display 
Laser Illumination 
Medical & Cosmetics 
Scientific Research

Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China

[Specifications]

Parameters

Symbol

Min.

Typical

Max.

Unit

Operation

Center wavelength

λ

805

808

811

nm

Output power

Po

 

5

 

W

Operation mode

 

 

CW

 

 

Absolute Maximum Ratings

Operation temperature

To

-10

25

50

Geometrical

Emitter width

w

 

190

 

μm

Cavity length

L

 

1500

 

μm

Chip width

W

 

400

 

μm

Chip height

H

 

150

 

μm

Electro Optical Data

Threshold current

Ith

 

1.2

 

A

Operating current

Iop

 

5

 

A

Operating voltage

Vop

 

1.8

 

V

Slope efficiency

ηd=Po/(Iop - Ith)

 

1.3

 

W/A

Total conversion efficiency

η=Po/(Iop x Vop)

 

55

 

%

Slow axis divergence②

θ∥

 

10

 

degrees

Fast axis divergence③

θ⊥

 

40

 

degrees

Spectral width②

△λ

 

3

 

nm

Polarization

 

 

TE/TM

 

 

Series resistance

Rs

 

0.03

 

Ω

Note:
①. Measured at room temperature and operation power.
②. Full width at 95 % power content.
③. FWHM (Full width half maximum).

 

 
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