790nm 10W 190μm Emission Width 4mm Cavity Length Single Emitter Laser Chip 790B-190-10-4-SE

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790nm 10W 190μm Emission Width 4mm Cavity Length Single Emitter Laser Chip 790B-190-10-4-SE

[Features]
High laser power
High efficiency.
Excellent beam characteristics.
Long lifetime, high reliability.

[Applications]
Laser Display 
Laser Illumination 
Medical & Cosmetics 
Scientific Research

Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China

[Specifications]

Parameters

Symbol

Min.

Typ.①②

Max.

Unit

Operation

Center wavelength

λ

787

790

793

nm

Output power

Po

 

10

 

W

Operation mode

 

 

CW

 

 

Absolute Maximum Ratings

Operation temperature

To

-10

25

50

Geometrical

Emitter width

w

 

190

 

μm

Cavity length

L

 

4000

 

μm

Chip width

W

 

500

 

μm

Chip height

H

140

150

160

μm

Electro Optical Data

Threshold current

Ith

 

1.3

1.5

A

Operating current

Iop

 

9.25

9.5

A

Operating voltage

Vop

 

1.75

1.85

V

Slope efficiency

ηd=Po/(Iop - Ith)

1.1

1.3

 

W/A

Total conversion efficiency

η=Po/(Iop x Vop)

60

65

 

%

Slow axis divergence④

θ∥

 

8

10

degrees

Fast axis divergence⑤

θ⊥

 

35

40

degrees

Spectral width⑤

△λ

 

2

3

nm

Polarization

 

 

TE

 

 

Temperature drift coefficient of wavelength

 

 

0.17

 

nm/℃

Note:
①. Mounted on a heat sink coolant temperature 25℃.
②. Center wavelength measured at 25℃ CW2A.
③. Full width at 95 % power content.
④. FWHM (Full width half maximum).

 

 
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