665nm 500mW 55μm Emission Width 1.2mm Cavity Length Single Emitter Laser Chip 665A-55-0.5-1.2-SE

Parameters

Symbol

Min.

Typ.①②

Max.

Unit

Operation

Center wavelength

λ

655

665

670

nm

Output power

Po

500

mW

Operation mode

CW

Absolute Maximum Ratings③

Operation temperature

To

-10

25

50

℃

Geometrical

Emitter width

w

55

μm

Cavity length

L

1200

μm

Chip width

W

250

μm

Chip height

H

150

μm

Electro Optical Data

Threshold current

Ith

240

mA

Operating current

Iop

600

700

800

mA

Operating voltage

Vop

2.1

V

Slope efficiency

ηd=Po/(Iop - Ith）

1.3

W/A

Total conversion efficiency

η=Po/(Iop x Vop)

39

%

Slow axis divergence④

θ∥

3

8

13

degrees

Fast axis divergence⑤

θ⊥

35

40

45

degrees

Spectral width⑤

△λ

1

nm

Polarization

TE

Temperature drift coefficient of wavelength

0.18

nm/℃

Note:
①. In the above table, the typical values of test data are obtained according to the test system of CivilLaser.
②. according to the single-tube chip test data. When testing a single-tube chip, it is packaged in COS (Chip On Submount), and the COS test temperature is 25°C.
③. The chip should not be used when the use conditions exceed the limit value; at the same time, except for the typical value, other use conditions do not mean that the service life of the chip can be guaranteed.
④. Full width at 95% power content.
⑤. FWHM (Full width half maximum).