638A-110-1-1.5-SE 638nm 1W 110μm Emission Width 1.5mm Cavity Length Single Emitter Laser Chip

Parameters

Symbol

Min.

Typ.①②

Max.

Unit

Operation

Center wavelength

λ

638

nm

Operation power

Po

0.9

1

W

Operation mode

CW

Absolute Maximum Ratings③

Operation temperature

To

-10

25

50

℃

Geometrical

Emitter width

w

110

μm

Cavity length

L

1500

μm

Chip width

W

300

μm

Chip height

H

150

μm

Electro Optical Data

Threshold current

Ith

0.5

0.6

A

Operating current

Iop

1.5

1.6

A

Operating voltage

Vop

2.1

2.3

V

Slope efficiency

ηd=Po/(Iop - Ith）

0.9

1

mW/mA

Total conversion efficiency

η=Po/(Iop x Vop)

30

32

%

Slow axis divergence④

θ∥

5

8

11

degrees

Fast axis divergence⑤

θ⊥

32

37

42

degrees

Spectral width⑤

△λ

1

nm

Polarization

TM

Temperature drift coefficient of wavelength

0.18

nm/℃

①. In the above table, the typical values of test data are obtained according to the test system of CivilLaser.
②. Obtained from the single-tube chip test data. When testing a single-tube chip, it is packaged in COS (Chip On Submount) and the COS test temperature is 25°C.
③. The chip does not guarantee the service life when it is used beyond the maximum value. Except for typical values, other usage conditions cannot guarantee the chip life.
④. Full width at 95% power content.
⑤. FWHM (Full width half maximum).