638nm 500mW Semiconductor Laser Chip 55μm Emission Width 1.2mm Cavity Length Single Emitter 638A-55-0.5-1.2-SE
[Features]
High laser power
High efficiency.
Excellent beam characteristics.
Long lifetime, high reliability.
[Applications]
Laser display/projection
Laser illumination
Medical&Cosmetics
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China
[Specifications]
|
Parameters
|
Symbol
|
Min.
|
Typ.①②
|
Max.
|
Unit
|
|
Operation
|
|
Center wavelength
|
λ
|
633
|
638
|
643
|
nm
|
|
Output power
|
Po
|
|
500
|
|
mW
|
|
Operation mode
|
|
|
CW
|
|
|
|
Absolute Maximum Ratings③
|
|
Operation temperature
|
To
|
-10
|
25
|
50
|
℃
|
|
Geometrical
|
|
Emitter width
|
w
|
|
55
|
|
μm
|
|
Cavity length
|
L
|
|
1200
|
|
μm
|
|
Chip width
|
W
|
|
250
|
|
μm
|
|
Chip height
|
H
|
|
150
|
|
μm
|
|
Electro Optical Data
|
|
Threshold current
|
Ith
|
|
240
|
|
mA
|
|
Operating current
|
Iop
|
600
|
700
|
800
|
mA
|
|
Operating voltage
|
Vop
|
|
2.2
|
|
V
|
|
Slope efficiency
|
ηd=Po/(Iop - Ith）
|
|
1.1
|
|
mW/mA
|
|
Total conversion efficiency
|
η=Po/(Iop x Vop)
|
|
31
|
|
%
|
|
Slow axis divergence④
|
θ∥
|
3
|
8
|
13
|
degrees
|
|
Fast axis divergence⑤
|
θ⊥
|
35
|
40
|
45
|
degrees
|
|
Spectral width⑤
|
△λ
|
|
1
|
|
nm
|
|
Polarization
|
|
|
TM
|
|
|
|
Temperature drift coefficient of wavelength
|
|
|
0.18
|
|
nm/℃
|
|
①. In the above table, the typical values of test data are obtained according to the test system of CivilLaser.
②. Obtained from the single-tube chip test data. When testing a single-tube chip, it is packaged in COS (Chip On Submount) and the COS test temperature is 25°C.
③. The chip does not guarantee the service life when it is used beyond the maximum value.
④. Covering 95% of the energy.
⑤. FWHM (Full width half maximum).
|
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