638nm 2.1W CW Single Emitter COS Laser Chip 638A-75*2-2.1-1.5-COS Made in China

$59.00

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638nm 2.1W CW Single Emitter COS Laser Chip 638A-75*2-2.1-1.5-COS Made in China

[Features]
High laser power.
High efficiency.
Long lifetime, high reliability.
Excellent beam characteristics.

Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China

[Specifications]

Parameters

Symbol

Min.

Typ.①②

Max.

Unit

Operation

Center wavelength

λ

633

638

643

nm

Output power

Po

 

2.1

 

W

Operation mode

 

 

CW

 

 

Absolute Maximum Ratings

Operation temperature

To

-10

25

50

Geometrical

Emitter width

w

 

75*2

 

μm

Cavity length

L

 

1500

 

μm

Chip width

W

 

400

 

μm

Chip height

H

 

150

 

μm

Electro Optical Data

Threshold current

Ith

 

0.7

0.8

A

Operating current

Iop

2.5

2.7

2.9

A

Operating voltage

Vop

 

2.2

2.4

V

Slope efficiency

ηd=Po/(Iop - Ith)

 

1.1

 

W/A

Total conversion efficiency

η=Po/(Iop x Vop)

32

35

 

%

Slow axis divergence④

θ∥

3

8

13

degrees

Fast axis divergence⑤

θ⊥

35

40

45

degrees

Spectral width⑤

△λ

 

1

 

nm

Polarization

 

 

TM

 

 

Temperature drift coefficient of wavelength

 

 

0.18

 

nm/℃

Note:
①. In the above table, the typical values of test data are obtained according to the test system of CivilLaser.
②. according to the single-tube chip test data. When testing a single-tube chip, it is packaged in COS (Chip On Submount), and the COS test temperature is 25°C.
③. The chip should not be used when the use conditions exceed the limit value; at the same time, except for the typical value, other use conditions do not mean that the service life of the chip can be guaranteed.
④. covering 95% of the energy.
⑤. FWHM (Full width half maximum).

 

 
 
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