905nm 225W Infrared Poweful Laser Diode TO9 Package 905E-300-225-0.75-TO

$49.00

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905nm 225W Infrared Poweful Laser Diode TO9 Package 905E-300-225-0.75-TO

[Features]
5stack PLD 
Laser wavelength: 905 nm 
Peak output power:≥ 225W 
Laser aperture (FWHM) size:240 μm x 19 μm 
Laser aperture (enclosed 95%E) size : 300 μm

[Applications]
LiDAR
Laser ranging
Safety monitoring
Scientific research test

Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In Chin

Absolute Maximum Ratings(Trt=25℃)

Parameters

Symbol

Value

Unit

Operation Current

Iop

45

A

Reverse voltage
Vr

20

V

Pulse Duration

Pw

100

ns

Duty ratio

DR

0.1

%

Operating Temperature

Top

-40~85

Storage Temperature

Tstg

-40~105

Soldering Temperature

Ts

≤260

 

Characteristics (Trt=25 ℃)

Parameters

Symbol

Min.

Typ.

Max.

Unit

Peak Emission Wavelength

λop

895

905

915

nm

Spectral Bandwidth

BW

5

7

8

nm

Wavelenth Temperature Coefficient

Δλ/ΔT

-

0.065

0.09

nm/℃

Electro Optical Data

Operation Power

Pop

-

225

-

W

Operation Current

Iop

38

39

40

A

Turn-on Voltage

Von

-

6.8

-

V

Series Resistance

Rs

-

0.60

-

Ω

Threhold Current

Ith

-

0.8

-

A

Operation Voltage

Vop

29

30

31

V

Beam Divergenc(95%E)parallel to pn-junction①

θ∥

12

13

16

degrees

Beam Divergenc(FWHM)parallel to pn-junction②

θ∥

9

10

11

degrees

Beam Divergenc(95%E) perpendicular to pn-junction①

θ⊥

48

50

52

degrees

Beam Divergenc(FWHM) perpendicular to pn-junction②

θ⊥

22

23

24

degrees

Geometrical

Laser Aperture (95%E) Size①

w

-

300

-

μm

Laser Aperture(FWHM) Size②

w x h

-

240 x 19

-

μm2

Cavity Length

L

-

750

-

μm

Chip Width

W

-

400

-

μm

Chip Height

H

-

150

-

μm

 

Notes: ①Full width at 95% power content;②Full Width at half maxima

 

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