808nm 30W High Power Semiconductor Laser IR Diode Laser Source

808nm 30W High Power Semiconductor Laser IR Diode Laser Source

[Specifications]
Product Name: 808nm Semiconductor Laser
Lead Time: 1~3 weeks
Output Wavelength: 808±5nm
Output Power: 30W
Spatial Mode: Multimode
Operating Mode: CW or Modulation
Pointing Stability: <0.05 mrad
Beam Diameter: Near 5*8 mm
Beam Divergence Angle: 3 mrad
Power Stability: <±10% per 2 hrs
Bean Height: Near 39mm
Temperature Stabilizing: TEC
Warm Up Time: <10 minutes
Optimum Operating Temperature: 20~30℃
Storage Temperature: 10~50℃
MTTF(mean time to failure): 10,000 hrs
Laser Head Dimension: Near 211(L)x151(W)x50.5(H)mm3 (Click here find detail)
Power Supply: Split type power supply / Lab Adjustable power supply (Choose)
Power Supply-1: Split Power Supply (Choose) (Click here find detail)
Power Supply-2: Lab Adjustable Power Supply (Choose) (Click here find detail)
Laser Radiator/Heat Sink: Not Include/Include (Choose) (Click here find detail)
Modulation: 0~30KHz Analog or TTL
Warranty: 1 Year

[Package Include]
1 x 808nm IR  Laser
1 x Laser power supply