Single Emitter Diode Laser 1064nm 10W CW COS(Chip on Submount) Laser Chip 1064A-190-10-4-COS
[Features]
High laser power.
High efficiency.
Long lifetime, high reliability.
Excellent beam characteristics.
[Applications]
Medical & Cosmetics
Materials Processing
Measuring instruments
Scientific Research
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China
[Specifications]
|
Parameters
|
Symbol
|
Min.
|
Typ.
|
Max.
|
Unit
|
|
Operation①
|
|
Center wavelength
|
λ
|
1049
|
1064
|
1074
|
nm
|
|
Output power
|
Po
|
10
|
|
|
W
|
|
Operation mode
|
|
|
CW
|
|
|
|
Geometrical
|
|
Emitter width
|
w
|
|
190
|
|
μm
|
|
Cavity length
|
L
|
|
4000
|
|
μm
|
|
Chip width
|
W
|
|
500
|
|
μm
|
|
Chip height
|
H
|
145
|
150
|
155
|
μm
|
|
Electro Optical Data
|
|
Threshold current
|
Ith
|
|
0.8
|
1
|
A
|
|
Operating current
|
Iop
|
|
12.5
|
|
A
|
|
Operating voltage
|
Vop
|
|
1.65
|
1.8
|
V
|
|
Slope efficiency
|
ηd=Po/(Iop - Ith）
|
0.7
|
0.85
|
|
W/A
|
|
Total conversion efficiency
|
η=Po/(Iop x Vop)
|
50
|
54
|
|
%
|
|
Slow axis divergence②
|
θ∥
|
|
8
|
12
|
degrees
|
|
Fast axis divergence③
|
θ⊥
|
|
28
|
35
|
degrees
|
|
Spectral width③
|
△λ
|
|
4.5
|
6
|
nm
|
|
Polarization
|
|
|
TE
|
|
|
|
①. Mounted on a heat sink coolant temperature 25℃, operating at nominal power.
②. Full width at 95 % power content.
③. FWHM(Full width half maximum).
|
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