905nm 55W TO56 Laser Diode Pulsed Semiconductor Laser Chip 905D-100-55-0.75-TO
[Features]
4 stack PLD.
Laser wavelength: 905nm
Peak output power: ≥55W
Optical aperture size: 100μm x 14μm
[Applications]
LiDAR
Laser ranging
Safety monitoring
Scientific research test
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China
[Specifications]
|
Parameters
|
Symbol
|
Value
|
Unit
|
|
Absolute Maximum Ratings(Trt=25℃)
|
|
Pulsed forward current
|
If
|
16
|
A
|
|
Reverse voltage
|
Vr
|
2.5
|
V
|
|
Pulse duration
|
tw
|
100
|
ns
|
|
Duty ratio
|
DR
|
0.1
|
%
|
|
Operating temperature
|
Top
|
-40~85
|
℃
|
|
Storage temperature
|
Tstg
|
-40~105
|
℃
|
|
Characteristics (Trt=25 ℃)
Iop=13 A, Pw=200 ns, f=5 kHz, DR=0.1 %, Ta=25
|
|
Wavelength
|
|
Peak emission wavelength
|
λop
|
905
|
nm
|
|
Wavelength tolerance
|
Δλ
|
10
|
nm
|
|
Spectral bandwidth①
|
Δλop
|
7
|
nm
|
|
Wavelenth temperature coefficient
|
Δλ/ΔT
|
0.28
|
nm/℃
|
|
Electro Optical Data
|
|
Minimum peak power at If
|
Pop
|
80
|
W
|
|
Forward current
|
If
|
13
|
A
|
|
Threhold current
|
Ith
|
0.4
|
A
|
|
Forward voltage at If
|
Vf
|
10.5
|
V
|
|
Beam spread angle(Horizontal) ②
|
θ∥
|
14
|
degree
|
|
Beam spread angle(Vertical) ①
|
θ⊥
|
30
|
degree
|
|
Geometrical
|
|
Optical aperture size
|
w x h
|
100 x 14
|
μm²
|
|
Cavity length
|
L
|
750
|
μm
|
|
Chip width
|
W
|
300
|
μm
|
|
Chip height
|
H
|
150
|
μm
|
|
①. FWHM(Full width half maximum).
②. Full width at 95% power content.
|
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