808nm 10W SE Single Emitter Diode Laser CW COS(Chip On Submount) Laser Chip 808B-350-10-2.5-COS
[Features]
High laser power.
High efficiency.
Long lifetime, high reliability.
Excellent beam characteristics.
[Applications]
Medical & Cosmetics
Materials Processing
Pumping of solid-state lasers
Scientific Research
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China
[Specifications]
|
Parameters
|
Symbol
|
Min.
|
Typ.
|
Max.
|
Unit
|
|
Operation①
|
|
Center wavelength
|
λ
|
798
|
808
|
818
|
nm
|
|
Output power
|
Po
|
9.5
|
10.5
|
|
W
|
|
Operation mode
|
|
|
CW
|
|
|
|
Geometrical
|
|
Emitter width
|
w
|
|
350
|
|
μm
|
|
Cavity length
|
L
|
|
2500
|
|
μm
|
|
Chip width
|
W
|
|
500
|
|
μm
|
|
Chip height
|
H
|
|
150
|
|
μm
|
|
Electro Optical Data
|
|
Threshold current
|
Ith
|
|
1.8
|
2.1
|
A
|
|
Operating current
|
Iop
|
|
10
|
|
A
|
|
Operating voltage
|
Vop
|
|
1.75
|
2.0
|
V
|
|
Slope efficiency
|
ηd=Po/(Iop - Ith）
|
1.1
|
1.3
|
|
W/A
|
|
Total conversion efficiency
|
η=Po/(Iop x Vop)
|
50
|
60
|
|
%
|
|
Slow axis divergence②
|
θ∥
|
|
8
|
13
|
degrees
|
|
Fast axis divergence③
|
θ⊥
|
|
36
|
45
|
degrees
|
|
Spectral width③
|
△λ
|
|
2
|
4
|
nm
|
|
Polarization
|
|
|
TM
|
|
|
|
Temperature drift coefficient of wavelength
|
|
|
0.25
|
|
nm/℃
|
|
Burn-in test
|
|
Burn-in current
|
IBI
|
|
12
|
|
A
|
|
Burn-in temperature
|
TBI
|
|
40
|
|
℃
|
|
Burn-in time
|
Ir
|
|
48
|
|
Hour
|
|
Power variation
|
△Po
|
|
|
5
|
%
|
|
①. Mounted on a heat sink with Rth =2~3 K/W, coolant temperature 25℃, operating at nominal power.
②. Full width at 95 % power content.
③. FWHM(Full width half maximum).
|
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