638nm 500mW CW Laser Chip 638A-55-0.5-1.2-TO-A1 55μm Emitter width TO56 Package

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638nm 500mW CW Laser Chip 638A-55-0.5-1.2-TO-A1 55μm Emitter width TO56 Package

[Features]
High efficiency.
Long lifetime, high reliability.
Excellent beam characteristics.

Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China

[Specifications]

Parameters

Symbol

Min.

Typ.①②

Max.

Unit

Operation

Center wavelength

λ

633

638

643

nm

Output power

Po

 

500

 

mW

Operation mode

 

 

CW

 

 

Absolute Maximum Ratings

Operation temperature

To

-10

25

50

Geometrical

Emitter width

w

 

55

 

μm

Cavity length

L

 

1200

 

μm

Chip width

W

 

250

 

μm

Chip height

H

 

150

 

μm

Electro Optical Data

Threshold current

Ith

 

220

250

mA

Operating current

Iop

600

700

800

mA

Operating voltage

Vop

 

2.3

2.6

V

Slope efficiency

ηd=Po/(Iop - Ith)

 

1.0

 

mW/mA

Total conversion efficiency

η=Po/(Iop x Vop)

24

31

 

%

Slow axis divergence④

θ∥

3

8

13

degrees

Fast axis divergence⑤

θ⊥

35

40

45

degrees

Spectral width⑤

△λ

 

1

1.5

nm

Polarization

 

 

TM

 

 

Temperature drift coefficient of wavelength

 

 

0.18

0.2

nm/℃

①. In the above table, the typical values of test data are obtained according to the test system of CivilLaser.
②. According to the TO56 test data, the TO56 test temperature is 25℃.
③. The chip does not guarantee the service life when it is used beyond the maximum value.
④. covering 95% of the energy.
⑤. FWHM (Full width half maximum).

 

 
638nm TO56 laser chip

638nm TO56 laser chip

638nm TO56 laser chip

638nm TO56 laser chip
 






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