638nm 2W CW Single Emitter COS Laser Chip 638A-60×3-2-1.5-COS Made in China
[Features]
High laser power.
High efficiency.
Long lifetime, high reliability.
Excellent beam characteristics.
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China
[Specifications]
|
Parameters
|
Symbol
|
Min.
|
Typ.①②
|
Max.
|
Unit
|
|
Operation
|
|
Center wavelength
|
λ
|
|
638
|
643
|
nm
|
|
Output power
|
Po
|
|
2
|
|
W
|
|
Operation mode
|
|
|
CW
|
|
|
|
Absolute Maximum Ratings③
|
|
Operation temperature
|
To
|
15
|
25
|
50
|
℃
|
|
Geometrical
|
|
Emitter width
|
w
|
|
60*3
|
|
μm
|
|
Cavity length
|
L
|
|
1500
|
|
μm
|
|
Chip width
|
W
|
|
450
|
|
μm
|
|
Chip height
|
H
|
|
150
|
|
μm
|
|
Electro Optical Data
|
|
Threshold current
|
Ith
|
0.8
|
0.9
|
|
A
|
|
Operating current
|
Iop
|
|
2.8
|
3
|
A
|
|
Operating voltage
|
Vop
|
|
2.2
|
|
V
|
|
Slope efficiency
|
ηd=Po/(Iop - Ith)
|
|
1
|
|
W/A
|
|
Total conversion efficiency
|
η=Po/(Iop x Vop)
|
|
32
|
|
%
|
|
Slow axis divergence④
|
θ∥
|
|
8
|
|
degrees
|
|
Fast axis divergence⑤
|
θ⊥
|
|
42
|
|
degrees
|
|
Spectral width⑤
|
△λ
|
|
1
|
|
nm
|
|
Polarization
|
|
|
TM
|
|
|
|
Temperature drift coefficient of wavelength
|
|
|
0.2
|
|
nm/℃
|
|
①. In the above table, the typical values of test data are obtained according to the test system of CivilLaser.
②. according to the single-tube chip test data. When testing a single-tube chip, it is packaged in COS (Chip On Submount), and the COS test temperature is 25°C.
③. The chip should not be used when the use conditions exceed the limit value; at the same time, except for the typical value, other use conditions do not mean that the service life of the chip can be guaranteed.
④. covering 95% of the energy.
⑤. FWHM (Full width half maximum).
|
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