860nm 2000mW IR Semiconductor Laser with Power Supply TTL Modulation
[Specifications]
Product Name: 860nm 2000mw IR Semiconductor Laser
Lead Time: 1~3 weeks! Custom product available!
Output Wavelength: 860(+/-5) nm
Output Power: 2000mW
Spatial Mode: Multi-mode
Operating Mode: CW or Modulation
Polarization: 10:01
Pointing Stability: <0.05 mrad
Beam Diameter: Near 6mm
Beam Divergence Angle: 2.5 mrad
Power Stability: <±3% per 2 hrs
Beam Height: Near 25mm
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam quality(M2): <20
Optimum Operating Temperature: 20~30℃
Storage Temperature: 10~50℃
MTTF(mean time to failure): 10,000 hrs
[Package include]
1 x 860nm/2000mW IR Laser head
1 x Laser power supply