808nm 4000mW Semiconductor Laser IR Diode Laser Source
[Specifications]
Product Name: 808nm Semiconductor Laser
Lead Time: 1~3 weeks! Custom product available!
Output Wavelength: 808(+/-5) nm
Output Power: 4W
Spatial Mode: Multimode
Operating Mode: CW or Modulation
Polarization: 10:01
Pointing Stability: <0.05 mrad
Beam Diameter: Near 5 mm
Beam Divergence Angle: 3 mrad
Power stability: <±3% per 2 hrs
Bean Height: Near 25mm
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam Quality(M²): <2
Optimum Operating Temperature: 20~30℃
Storage Temperature: 10~50℃
[Package Include]
1 x 808nm Laser head
1 x Laser power supply
808nm Semiconductor laser 2000mw with power supply Modulation is TTL or Analog