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Laser Module(Dot/Line/Cross..)->

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Fiber Coupled Laser(PM)->

Pigtailed Laser(MM FC Laser)->

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Pigtailed Laser(PM FC Laser)->

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|_ 375nm Semiconductor Laser

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|_ 385nm Semiconductor Laser

|_ 395nm Semiconductor Laser

|_ 405nm Semiconductor Laser

|_ 410nm Semiconductor Laser

|_ 415nm Semiconductor Laser

|_ 420nm Semiconductor Laser

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|_ 425nm Semiconductor Laser

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|_ 434nm Semiconductor Laser

|_ 435nm Semiconductor Laser

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|_ 442nm Semiconductor Laser

|_ 444nm Semiconductor Laser

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|_ 450nm Semiconductor laser

|_ 455nm Semiconductor laser

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|_ 465nm Semiconductor Laser

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|_ 532nm Semiconductor Laser

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|_ 635nm Semiconductor laser

|_ 637nm Semiconductor laser

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|_ 658nm Semiconductor Laser

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Home :: Semiconductor Laser :: 785nm Semiconductor Laser :: NIR Laser Source 785nm 80mW 0.01nm Narrow Linewidth Raman Laser 1*2.5mm spot

NIR Laser Source 785nm 80mW 0.01nm Narrow Linewidth Raman Laser 1*2.5mm spot

785nm Semiconductor Laser

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NIR Laser Source 785nm 80mW 0.01nm Narrow Linewidth Raman Laser 1*2.5mm spot

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$2,856.00

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NIR Laser Source 785nm 80mW 0.01nm Narrow Linewidth Raman Laser

[Lead Time]
785nm 80mW Raman Laser: 3~4 weeks

[Features]
1. Spectral linewidth: <0.01nm
2. High power stability: <3%

[Application]
2. Raman spectroscopy
2. Sensing

[Specifications]
Product Name: 785nm Narrow Linewidth Laser
Wavelength: 785nm
Output Power: 80mW
Spectral Linewidth：<0.01nm
Beam Size: Near 1*2.5 mm
Beam Divergence Angle: Near 1 mrad
Operating Temperature: 0°C-40°C
Storage Temperature: -40°C-85°C

Parameter	Work condition	Symbol	Min.	Typical Value	Max.	Unit
Output Power	APC mode	PO			80	mW
Beam Diameter	Po , 1/e2	DiaV		2.5		mm
Beam Diameter	Po , 1/e2	DiaH		1		mm
Power Stability	2hrs	Ps			3	%
Spectral Linewidth	FWHM	PO			0.01	nm
Spectral Stability	λs	PO		0.01		nm/°C
Central Wavelength	@PO	λc	784	785	796	nm
Service Life	@PO	MTBF	10000			Hrs

narrow linewidth raman laser

narrow linewidth raman laser

narrow linewidth raman laser

narrow linewidth raman laser

narrow linewidth raman laser

narrow linewidth raman laser

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