785nm 1~1500mW IR Diode Laser Semiconductor Laser Source

785nm 1~1500mW IR Diode Laser Semiconductor Laser Source

[Features]
1.High power stability(<3%)
2.Small volume, easy to install

[Specifications]
Product Name: 785nm Semiconductor Laser
Lead Time: 1~3 weeks!
Wavelength: 785nm±5 nm
Output Power: 1~1500mW
Spectral Linewidth：<2nm
Beam Size: Near 5*5 mm
Beam Divergence Angle: <6 mrad
Operating Temperature: 0°C-40°C
Storage Temperature: -40°C-85°C
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
MTTF(mean time to failure): 10,000 hrs
Laser Dimension: Near 140(L)x49(W)x42(H)mm 
Power Supply: Adjustable Power Supply
Modulation: 0~10KHz TTL
Warranty: 1 Year

[Packing List]
1 x Laser head
1 x Power supply
1 x Test data report
1 x Operation manual
 

785nm 1500mW Test report - Civillaser.pdf

Note: Test report reference only, each laser parameters can be adjusted according to customer demand.